Compared to Si devices,the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new material.This paper proposes a practical SiC MOSFET junction temperature monitoring method based on the on-state voltage$\\boldsymbol{V}_{\\mathbf{ds}(\\mathbf{on})}$measurement.In Section II of the paper,the temperature sensitivity of the on-state voltage$\\boldsymbol{V}_{\\mathbf{ds}(\\mathbf{on})}$is characterized.The hardware of the measurement system is set up in Section III,which consists of an On-state Voltage Measurement Circuit(OVMC),the sampling and isolation circuit.Next,a calibration method based on the self-heating of the SiC MOSFET chip is presented in Section IV.In the final Section,the junction temperature is monitored synchronously according to the calibration results.The proposed method is applied to a Buck converter and verified by both an Infrared Radiation(IR)camera and a Finite Element Analysis(FEA)tool.
Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their development.In this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization approaches.Specifically,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS decrease.Simulations allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.
NicolòZagniManuel FregolentAndrea Del FiolDavide FaveroFrancesco BergaminGiovanni VerzellesiCarlo De SantiGaudenzio MeneghessoEnrico ZanoniChristian HuberMatteo MeneghiniPaolo Pavan