The achievement of electrical spin control is highly desirable.One promising strategy involves electrically mod-ulating the Rashba spin orbital coupling effect in materials.A semiconductor with high sensitivity in its Rashba constant to external electric fields holds great potential for short channel lengths in spin field-effect transistors,which is crucial for preserving spin coherence and enhancing integration density.Hence,two-dimensional(2D)Rashba semiconductors with large Rashba constants and significant electric field responses are highly desirable.Herein,by employing first-principles calculations,we design a thermodynamically stable 2D Rashba semiconductor,YSbTe_(3),which possesses an indirect band gap of 1.04 eV,a large Rashba constant of 1.54 eV·Åand a strong electric field response of up to 4.80 e·Å^(2).In particular,the Rashba constant dependence on the electric field shows an unusual nonlinear relationship.At the same time,YSbTe_(3)has been identified as a 2D ferroelectric material with a moderate polarization switching energy barrier(~0.33 eV per formula).By changing the electric polarization direction,the Rashba spin texture of YSbTe_(3)can be reversed.These out-standing properties make the ferroelectric Rashba semiconductor YSbTe_(3)quite promising for spintronic applications.
The behavior of the quantum correlations, information scrambling and the non-Markovianity of three entangling qubits systems via Rashba is discussed. The results showed that, the three physical quantities oscillate between their upper and lower bounds, where the number of oscillations increases as the Rashba interaction strength increases. The exchanging rate of these three quantities depends on the Rashba strength, and whether the entangled state is generated via direct/indirect interaction. Moreover, the coherence parameter can be used as a control parameter to maximize or minimize the three physical quantities.
The prime objective of this work is to analyze the motion of magnetic domain walls(DWs)in a thin layer of magnetostrictive material that is perfectly attached to the upper surface of a thick piezoelectric actuator.In our analysis,we consider a transversely isotropic hexagonal subclass of magnetostrictive materials that demonstrate structural inversion asymmetry.To this aim,we utilize the one-dimensional extended Landau-Lifshitz-Gilbert equations,which describe the magnetization dynamics under the influence of various factors such as magnetic fields,spin-polarized electric currents,magnetoelastic effects,magnetocrystalline anisotropy,Rashba fields,and nonlinear dry-friction dissipation.By employing the standard traveling wave ansatz,we derive an analytical expression of the most relevant dynamic features:velocity,mobility,threshold,breakdown,and propagation direction of the DWs in both steady and precessional dynamic regimes.Our analytical investigation provides insights into how effectively the considered parameters can control the DW motion.Finally,numerical illustrations of the obtained analytical results show a qualitative agreement with the recent observations.
Rashba spin splitting(RSS)and quantum spin Hall effect(QSHE)have attracted enormous interest due to their great significance in the application of spintronics.In this work,we theoretically proposed a new two-dimensional(2D)material H–Pb–F with coexistence of giant RSS and quantum spin Hall effec by using the ab initio calculations.Our results show that H–Pb–F possesses giant RSS(1.21 eV·A)and the RSS can be tuned up to 4.16 e V·A by in-plane biaxial strain,which is a huge value among 2D materials.Furthermore,we also noticed that H–Pb–F is a 2D topological insulator(TI)duo to the strong spin–orbit coupling(SOC)interaction,and the large topological gap is up to 1.35 e V,which is large enough for for the observation of topological edge states at room temperature.The coexistence of giant RSS and quantum spin Hall effect greatly broadens the potential application of H–Pb–F in the field of spintronic devices.
Two-dimensional(2D)ferroelectric(FE)systems are promising candidates for non-volatile nanodevices.Previous studies mainly focused on 2D compounds.Though counter-intuitive,here we propose several new phases of tellurium with(anti)ferroelectricity.Two-dimensional films can be viewed as a collection of one-dimensional chains,and lone-pair instability is responsible for the(anti)ferroelectricity.The total polarization is determined to be 0.34×10^(-10)C/m for the FE ground state.Due to the local polarization field in the FE film,we show a large Rashba splitting(α_(R)~2 eV·?)with nonzero spin Hall conductivity for experimental detection.Furthermore,a dipole-like distribution of Berry curvature is verified,which may facilitate a nonlinear Hall effect.Because Rashba-splitting/Berry-curvature distributions are fully coupled with a polarization field,they can be reversed through FE phase transition.Our results not only broaden the elemental FE materials,but also shed light on their intriguing transport phenomena.
