The effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron discharge was investigated. The ion velocity distribution function(IVDF), the maximum ion energy and ion flux density were measured at the substrate by a retarding field energy analyzer. The sputtering behavior was investigated by the electric characteristics of target and bias discharges using voltage–current probe technique. It was found that the substrate bias led to the decrease of sputtering power, voltage and current with the amplitude <7.5%. The substrate bias also led to the broadening of IVDFs and the increase of ion flux density, made the energy divergent of ions impacting the substrate. This effect was further enhanced by increasing bias power and reducing discharge pressure.
The pre-ionized 60 MHz very-high-frequency （VHF） magnetron discharge at low pressure, assisted by inductively coupled plasma （ICP） discharge, was developed. The measurement of ion flux density and ion energy to the substrate was carried out by a retarding field energy analyzer. The electric characteristics of discharge were also investigated by voltage-current probe technique. It was found that by reducing the discharge pressure of VHF magnetron discharge from 5 to 1 Pa, the ion flux density increased about four times, meanwhile the ion energy also increased doubly. The electric characteristics of discharge also showed that a little improvement of sputtering effectiveness was achieved by reducing discharge pressure. Therefore, the deposition property of VHF （60 MHz） magnetron sputtering can be improved by reducing the discharge pressure using the ICP-assisted pre-ionized discharge.
Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy （OES） was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency （LF） source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films＇ deposition, and reduce surface residues.
The initial growth and microstructure feature of Ag films formation were investigated, which were prepared by using the very-high-frequency（VHF）（60 MHz） magnetron sputtering. Because of the moderate energy and very low flux density of ions impinging on the substrate, the evolutions of initial growth for Ag films formation were well controlled by varying the sputtering power. It was found that the initial growth of Ag films followed the island（Volmer—Weber, VW） growth mode, but before the island nucleation, the adsorption of Ag nanoparticles and the formation of Ag clusters dominated the growth. Therefore, the whole initial stages of Ag films formation included the adsorption of nanoparticles, the formation of clusters, the nucleation by the nanoparticles and clusters simultaneously, the islands formation, and the coalescence of islands.
The effect of gas pressure on ion energy distribution at the substrate side of Ag target radio-frequency(RF)and very-high-frequency(VHF)magnetron sputtering discharge was investigated.At lower pressure,the evolution of maximum ion energy(E)with discharge voltage(V)varied with the excitation frequency,due to the joint contribution of the ion generation in the bulk plasma and the ion movement across the sheath related to the ion transit sheath timeτiand RF periodτRF.At higher pressure,the evolution of E–V relationships did not vary with the excitation frequency,due to the balance between the energy lost through collisions and the energy gained by acceleration in the electric field.Therefore,for RF and VHF magnetron discharge,lower gas pressure can have a clear influence on the E–V relationship.
The growth of silicon on Ag films via 40.68 MHz very-high-frequency （VHF） magnetron sputtering was investigated. The energy distribution and flux density of the ions on the substrate were also measured. The results showed that 40.68 MHz magnetron sputtering can produce ions with higher energy and lower flux density. The impact of these ions onto the grown surface promotes the growth of silicon, which is related to the crystalline nature and microstructure of the underlayer of the Ag films, and there is large particle growth of silicon on Ag films with a preferred orientation of （111）, and two-dimensional growth of silicon on Ag films with a better face-centered cubic structure.
