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国家自然科学基金(s50942021)

作品数:2 被引量:1H指数:1
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Structure and properties of indium-doped ZnO films prepared by RF magnetron sputtering under different pressures
2022年
High conductive and transparent In-doped ZnO thin films were deposited on glass substrates by radio-frequency(RF)magnetron sputtering at 250℃.Argon gas was used as the sputtering gas,and its pressure varies from 0.1 to 4.0 Pa.The influences of deposition pressure on the structural,electrical and optical properties of the films were investigated by means of X-ray diffraction(XRD),scanning electron microscope(SEM)and Hall and transmittance measurements.The optical constant of the films was estimated from transmittance data using a nonlinear programming method.It is found that the deposition pressure affects the properties of the films significantly.The film deposited at 2.0 Pa shows the optimal crystal quality with a high transmittance of 85%in the visible range and a low resistivity of 2.4×10^(−3)Ω·cm and can thus be used as a transparent electrode.
Li-Ping PengA-Ling HeLiang FangXiao-Fei Yang
The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films被引量:1
2012年
Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO:In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.
彭丽萍方亮吴卫东王雪敏李丽
关键词:ANNEALING
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