A multi-step reaction route was developed to synthesize boron nitride（BN） nanoparticles via the reactionbetween NaN3 and BC13 in a benzene-thermal solution. By means of this route, the crystallinity of BN nanoparticleswas improved via increasing the reaction steps. Meanwhile, a phase transformation from hexagonal BN（hBN） or tur-bostratic BN（tBN） to cubic BN（cBN） occurred, resulting in the increase of cBN content. Moreover, the content ofcBN also slightly increased when the temperature was elevated from 265 ℃ to 280 ℃.
TAN MiaoLIAN GangZHANG XiaoZHANG Shun-jieCUI De-liangWANG Qi-long
Al2O3 porous nanosolid was prepared via solvothermal hot-press（SHP） method.The dielectric constant of Al2O3 porous nanosolid is as low as 2.34,while its compressive strength is very poor.In order to improve the compressive strength and maitain low dielectric constant,polyimide was introduced to prepare Al2O3 /polyimide composite porous nanosolid.Compared to Al2O3 porous nanosolid,Al2O3 /polyimide composite porous nanosolid possesses much higher compressive strength,which reaches its saturation value when the mass loading of polyimide is 7.75%.In addition,the in situ Fourier transformation infrared（FTIR） monitoring result reveals that Al2O3 /polyimide composite porous nanosolid is stable up to 400 °C.
Although organic semiconductors have attracted extensive interest and been utilized to fabricate a variety of optoelectronic devices, their electrical transportation characteristics under high pressure have rarely been investigated. However, the weak intermolecular interaction of organic semiconductors endows them with a pressure-sensitive crystal structure and electrical transportation performance, especially the latter. Herein, a new pressure-sensitive transistor was fabricated from an organic semiconductor 1,1＇-dibutyl-4,4＇-bipyridinium diiodide. It was found that this transistor exhibited increasing resistance as the pressure gradually increased and that it eventually shut off under a pressure of 288 MPa. Such a characteristic makes this organic semiconductor a potential candidate for the use in the fabrication of pressure-sensitive switches and regulators. In addition, these results shed light on the electrical performance of flexible organic optoelectronic devices working under high pressure levels resulted from the bending force.
FU XianweiLIU YangLIU ZhiDONG NingZHAO TianyuZHAO DanLIAN GangWANG QilongCUI Deliang
