在标准互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺下设计了1种单片集成金属-半导体-金属(metal-semiconductor-metal,MSM)光电探测器的光接收机.带有源反馈和负米勒反馈电容的跨阻前置放大器用来提高光接收机的带宽.由于MSM光电探测器具有较高的响应度,所以光接收机的灵敏度得到改善.由于MSM光电探测器的寄生电容较小,在特许半导体0.35μm工艺下实现了带宽为1.7GHz的光接收机.测试结果表明,在-15dBm的光功率和误码率为10-9的条件下,光接收机的数据传输速率达到了2Gb/s.在3.3V电压下,芯片的功耗为94mW.
A monolithically integrated optical receiver, including the photodetector, has been realized in Chartered 0.35μm EEPROM CMOS technology for 850 nm optical communication. The optical receiver consists of a differential photodetector, a differential transimpedance amplifier, three limiting amplifiers and an output circuit. The experiment results show that the receiver achieves an 875 MHz 3 dB bandwidth, and a data rate of 1.5 Gb/s is achieved at a bit-error-rate of 10-9. The chip dissipates 60 mW under a single 3.3 V supply.
This paper presents a realization of a silicon-based standard CMOS,fully differential optoelectronic integrated receiver based on a metal–semiconductor–metal light detector（MSM photodetector）.In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photogenerated currents.The optoelectronic integrated receiver was designed and implemented in a chartered 0.35μm, 3.3 V standard CMOS process.For 850 nm wavelength,it achieves a 1 GHz 3 dB bandwidth due to the MSM photodetector’s low capacitance and high intrinsic bandwidth.In addition,it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to–3 dB frequency.
