High-temperature （150-220 ℃） growth leads to the formation of some peptide nanotube/microtube （NT/MT） arrays but the NTs/MTs exhibit closed ends, irreversible phase modification and eliminations of piezoelectric and hydrophilic properties. Here we demonstrate the fabrication of unidirectionally aligned and stable diphenylalanine NT/MT arrays with centimeter scale area at room temperature by utilizing an external electric field. The interactions between the applied electric field and dipolar electric field on the NTs and surface positive charges are responsible for the formation. The unidirectionally aligned MT array exhibits a supercapacitance of 1,000 μF·cm^-2 at a scanning rate of 50 mV·s^-1; this is much larger than the values reported previously in peptide NT/MT arrays.
Jinlei Zhang Xinglong Wu Zhixing Gan Xiaobin Zhu Yamin Jin
分别在Si(110)和Si(111)衬底上制备了In Ga N/Ga N多量子阱结构蓝光发光二极管(LED)器件.利用高分辨X射线衍射、原子力显微镜、室温拉曼光谱和变温光致发光谱对生长的LED结构进行了结构表征.结果表明,相对于Si(111)上生长LED样品,Si(110)上生长的LED结构晶体质量较好,样品中存在较小的张应力,具有较高的内量子效率.对制备的LED芯片进行光电特性分析测试表明,两种衬底上制备的LED芯片等效串联电阻相差不大,在大电流注入下内量子效率下降较小;但是,相比于Si(111)上制备LED芯片,Si(110)上LED芯片具有较小的开启电压和更优异的发光特性.对LED器件电致发光(EL)发光峰随驱动电流的变化研究发现,由于Si(110)衬底上LED结构中阱层和垒层存在较小的应力/应变而在器件中产生较弱的量子限制斯塔克效应,致使Si(110)上LED芯片EL发光峰随驱动电流的蓝移量更小.
