Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting（PLM）.P type silicon wafers were implanted with 245 keV ^126Te^＋ to a dose of 2×10^15 ions/cm^2,after a PLM process（248 nm,laser fluence of 0.30 and 0.35 J/cm^2,1-5 pulses,duration 30 ns）,an n^＋ type single crystalline tellurium supersaturated silicon layer with high carrier density（highest concentration 4.10×10^19 cm^3,three orders of magnitude larger than the solid solution limit） was formed,it shows high broadband optical absorption from 400 to 2500 nm.Current-voltage measurements were performed on these diodes under dark and one standard sun（AM 1.5）,and good rectification characteristics were observed.For present results,the samples with 4-5 pulses PLM are best.
