金属氧化物薄膜晶体管（metal oxide thin film transistor，MOTFT）由于具有迁移率高、均匀性好、工艺简单、工艺温度低、成本低等优势，非常适合高分辨率、大尺寸液晶显示（LCD）和有源矩阵有机发光二极管显示（AMOLED）等新型显示技术发展的需要，因此受到业界和学界的广泛关注．结合本课题组的工作，本文阐述了MOTFT的材料、器件结构、制作工艺以及应用，并对影响MOTFT性能的因素进行了讨论．本课题组开发的新型MOTFT迁移率可达35cm^2／（Vs），阈值电压为1．63V，开关比为10^9，亚阈值摆幅为0．21Wdecade．基于自主开发的MOTFT背板，在国内率先实现了3—5英寸彩色AMOLED显示屏、透明AMOLED显示屏以及柔性AMOLED显示屏，展示了MOTFT背板良好的应用前景．
A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.
