A new lifetime control technique-localized platinum lifetime control （LPLC） is introduced. Silicon samples are implanted with 550keV protons at dosages from 1 × 10^13 to 5 × 10^14 cm^-2. Subsequently, platinum diffusion in silicon is performed at 700 or 750℃ for 15 or 30min,respectively. Then the in-diffused platinum into damaged regions of the proton-implanted silicon is investigated by use of deep-level transient spectroscopy （DLTS）. Finally, for all of the LPLC samples, the distribution of the in-diffused substitutional platinum agrees well with the damage distribution resulting from the low-dosage proton implantation. Also, the diodes show a very low leakage current even at elevated temperatures while keeping the major advantages of ion irradiation devices, including low turn-off loss and soft recovery.
