Three types of a-C:Co/Si samples were fabricated using the pulsed laser deposition: Co2-C98/8i with Co dispersed in the a-C film, Co2-C98/Si with Co segregated at the interface, and a-C/Co/Si with Co continuously distributed at the a-C/Si interface. Both types of Co2-C98/Si samples had the positive bias-voltage-dependent magnetoresistance (MR) at 300 K, and all MRs had saturated behavior. The study on the electrotransport properties indicated that the MR appeared in the diffusion current region, and the mechanism of MR was proposed to be that the applied magnetic field and local random magnetic field caused by the superparamagnetic Co particles modulate the ratio of singlet and triplet spin states, resulting in the MR effect. In addition, the very different physical and structural properties of all samples revealed that Co played a crucial role in the room-temperature positive MR of a-C:Co/Si system.
Atomistic simulation has been performed to investigate the dynamical and defect properties of multiferroic hexagonal YMnO3 with newly developed interaction potentials. Dynamical calculation reveals that phonon vibrations of hexagonal YMnO3 are quite different from those of orthorhombic YMnO3. Defect calculation finds that O Frenkel is the most probable intrinsic disorder, and Mn antisite defect is favorable to exist, especially for Mn ions entering the Y2 sites. It is also found that holes prefer to localize at O2sites rather than at Mn3+ sites, while the electron can be localized at the Mn3+ site. The disproportionation of Mn3+ ions is unlikely to occur in hexagonal YMnO3.
