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国家高技术研究发展计划(2007AA01Z2A7)

作品数:29 被引量:25H指数:2
相关作者:李智群王志功樊祥宁张浩李伟更多>>
相关机构:东南大学南京电子器件研究所鲁东大学更多>>
发文基金:国家高技术研究发展计划江苏省“六大人才高峰”高层次人才项目江苏省科技成果转化专项资金更多>>
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29 条 记 录,以下是 1-10
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Design of low power common-gate low noise amplifier for 2.4 GHz wireless sensor network applications被引量:2
2012年
This paper presents a differential low power low noise amplifier designed for the wireless sensor network (WSN) in a TSMC 0.18μm RF CMOS process.A two-stage cross-coupling cascaded common-gate(CG) topology has been designed as the amplifier.The first stage is a capacitive cross-coupling topology.It can reduce the power and noise simultaneously.The second stage is a positive feedback cross-coupling topology,used to set up a negative resistance to enhance the equivalent Q factor of the inductor at the load to improve the gain of the LNA.A differential inductor has been designed as the load to achieve reasonable gain.This inductor has been simulated by the means of momentum electromagnetic simulation in ADS.A "double-π" circuit model has been built as the inductor model by iteration in ADS.The inductor has been fabricated separately to verify the model. The LNA has been fabricated and measured.The LNA works well centered at 2.44 GHz.The measured gain S_(21) is variable with high gain at 16.8 dB and low gain at 1 dB.The NF(noise figure) at high gain mode is 3.6 dB,the input referenced 1 dB compression point(IP1dB) is about -8 dBm and the IIP3 is 2 dBm at low gain mode.The LNA consumes about 1.2 mA current from 1.8 V power supply.
张萌李智群
关键词:CROSS-COUPLING
Design and optimization of a 0.5 V CMOS LNA for 2.4-GHz WSN application
2012年
This paper presents a low noise amplifier(LNA),which could work at an ultra-low voltage of 0.5 V and was optimized for WSN application using 0.13μm RF-CMOS technology.The circuit was analyzed and a new optimization method for a folded cascode LNA was introduced.Measured results of the proposed circuit demonstrated a power gain of 14.13 dB,consuming 3 mW DC power,showing 1.96 dB NF and an input 1-dB compression point of -19.9 dBm.Both input power matching(S_(11)) and output power matching(S_(22)) were below -10 dB.The results indicate that this LNA is fully applicable to low voltage and low power applications.
陈亮李智群
关键词:LNAWSNCMOS
A 5-GHz programmable frequency divider in 0.18-μm CMOS technology
2010年
A 5-GHz CMOS programmable frequency divider whose modulus can be varied from 2403 to 2480 for 2.4-GHz ZigBee applications is presented.The divider based on a dual-modulus prescaler(DMP) and pulse-swallow counter is designed to reduce power consumption and chip area.Implemented in the 0.18-μm mixed-signal CMOS process,the divider operates over a wide range of 1-7.4 GHz with an input signal of 7.5 dBm;the programmable divider output phase noise is -125.3 dBc/Hz at an offset of 100 kHz.The core circuit without test buffer consumes 4.3 mA current from a 1.8 V power supply and occupies a chip area of approximately 0.015 mm^2.The experimental results indicate that the programmable divider works well for its application in frequency synthesizers.
舒海涌李智群
Design of a high performance CMOS charge pump for phase-locked loop synthesizers
2011年
A new high performance charge pump circuit is designed and realized in 0.18μm CMOS process. A wide input ranged rail-to-rail operational amplifier and self-biasing cascode current mirror are used to enable the charge pump current to be well matched in a wide output voltage range.Furthermore,a method of adding a precharging current source is proposed to increase the initial charge current,which will speed up the settling time of CPPLLs.Test results show that the current mismatching can be less than 0.4%in the output voltage range of 0.4 to 1.7 V,with a charge pump current of 100μA and a precharging current of 70μA.The average power consumption of the charge pump in the locked condition is around 0.9 mW under a 1.8 V supply voltage.
李智群郑爽爽侯凝冰
2.4GHz无线传感器网络SoC芯片上混频器的设计被引量:1
2009年
介绍了一种采用SMIC 0.18μm RFCMOS工艺,设计了一种应用于2.4 GHz无线传感器网络SoC芯片的射频发射机上混频器模块电路单元,其中转换增益为-6.3 dB,输入1 dB压缩点为-4.6 dBm。工作电压为1.8 V,功耗为5.4 mW,工作频率范围为2.4~2.483 5 GHz,工作温度范围为-20^+80℃低功耗的上混频器。上混频器芯片的面积为0.56 mm2。
张磊樊祥宁
关键词:低功耗
应用于无线传感器网络的低噪声放大器设计被引量:2
2010年
给出一种基于SMIC0.13μm RFCMOS工艺、应用于无线传感器网络2.4GHz的低噪声放大器设计。设计目标为在2.43GHz的中心频率下带宽为120MHz,并且增益分为高20dB、中10dB及低0dB三档可调。电路采用功率和噪声优化技术,输入端采用片外电感匹配,输入输出都匹配到50Ω阻抗。在Cadence Spectre仿真环境下的后仿真结果表明:高增益时S21为21.2dB而噪声系数为0.5dB,S11为-29.8dB,S22为-20.7dB。电路在1.2V电源电压下的工作电流约为6mA。
张萌王志功李智群张浩
关键词:无线传感器网络低噪声放大器射频集成电路
A new wideband LNA using a g_m-boosting technique
2014年
A new broadband low-noise amplifier (LNA) is proposed. The conventional common gate (CG) LNA exhibits a relatively high noise figure, so active gin-boosting technology is utilized to restrain the noise generated by the input transistors and reduce the noise figure. Theory, simulation and measurement are shown. An implemented prototype using 0.13 μm CMOS technology is evaluated using on-wafer probing. S11 and S22 are below -10 dB across 0.1-5 GHz. Measurements also show a gain of 18.3 dB with a 3 dB bandwidth from 100 MHz to 2.1 GHz and an ⅡP3 of-7 dBm at 2 GHz. The measured noise figure is better than 2.5 dB below 2.1 GHz, is better than 4.5 dB below 5 GHz, and at 500 MHz, it gets its minimum value 1.8 dB. The LNA consumes 9 mA from 1.5 V supply and occupies an area of 0.04 mm^2.
陈亮李智群曹佳吴晨健张萌
应用于无线传感网的低功耗PGA设计被引量:1
2009年
可编程增益放大器(PGA)主要应用于无线传感网络射频前端接收机芯片。PGA的设计采用0.18μm RF CMOS工艺,以负载可编程为基础实现增益可变。PGA电压增益范围1~60dB,增益步长1dB,增益误差小于0.5dB,中心频率为2MHz,3dB带宽大于3.2MHz。通过控制放大器尾电流源工作与否来实现功耗管理。当电源电压为1.8V时,最大功耗为4mW,最小功耗为1.3mW。通过仿真验证,PGA性能能够满足系统设计要求。
曹堃李智群
关键词:微电子低功耗
Design of ultralow power receiver front-ends for 2.4 GHz wireless sensor network applications
2014年
This paper presents the design of an ultralow power receiver front-end designed for a wireless sensor network (WSN) in a 0.18 μm CMOS process. The author designs two front-ends working in the saturation region and the subthreshold region respectively. The front-ends contain a two-stage cross-coupling cascaded common-gate (CG) LNA and a quadrature Gilbert IQ mixer. The measured conversion gain is variable with high gain at 24 dB and low gain at 7 dB for the saturation one, and high gain at 22 dB and low gain at 5 dB for the subthreshold one. The noise figure (NF) at high gain mode is 5.1 dB and 6.3 dB for each. The input 1 dB compression point (IPldB) at low gain mode is about -6 dBm and -3 dBm for each. The front-ends consume about 2.1 mA current from 1.8 V power supply for the saturation one and 1.3 mA current for the subthreshold one. The measured results show that, comparing with the power consumption saving, it is worth making sacrifices on the performance for using the subthreshold technology.
张萌李智群王曾祺吴晨健陈亮
A 0.5 V divider-by-2 design with optimization methods for wireless sensor networks
2013年
A 0.5 V static master-slave D flip-flop (DFF) divider-by-2 is implemented with a 0.13 μm 1P8M RF- mixed signal CMOS process. Low-threshold transistors in a deep-N well with forward-body bias technology are used in the circuit. Each of the D-latch with source coupled logic consists of sensing and latching circuits. To increase the maximum operating frequency and decrease power consumption, the latching current is one half of the sensing current. The circuit optimization methods are described in this paper. The measured maximum operating frequency is 6.5 GHz and the minimum input singled-signal amplitude is 0.15 V.
王利丹李智群
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