A novel one-dimensional（1D） analytical model is proposed for quantifying the breakdown voltage of a reduced surface field（RESURF） lateral power device fabricated on silicon on an insulator（SOI） substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.
In order to make a 10 Gbit/s 2：1 half-rate multiplexer operate without external clocks, a 5 Gbit/s clock recovery （CR） circuit is needed to extract the desired clock from one input data. For the CR circuit, a 3-stage ring voltage-controlled oscillator （VCO） is employed to avoid an unreliable startup of a 2-stage VCO and a low oscillation frequency of a 4-stage VCO. A phase frequency detector （PFD） is used to expand the pull-in range to meet the wide tuning range of a VCO required by process-voltage-temperature （PVT） variation. SMIC 0. 18-μm CMOS technology is adopted and the core area is 170 μm ×270 μm. Measurements show that, under a 1.8 V supply voltage, it consumes only about 90 mW, and has an input sensitivity of less than 25 mV, an output single-ended swing of above 300 mV, a phase noise of - 114 dBc/Hz at 1 MHz offset and a pull-in range of 1 GHz.
