The inorganic-organic hybrid junction was synthesized on ITO glass substrate, which was consisted of an n-type ZnO nanorods (NRs) grown by low-temperature aqueous chemical growth method and a p-type polyfluorene (PF) organic film fabricated by spin-coating. The experimental results indicate that densely and uniformly distributed ZnO nanorods are successfully grown on the PF layer. The thickness of the PF layer plays a dominant role for the current-voltage (I-V) characteristic of the ZnO NRs/PF inorganic-organic hybrid junction device, and a p-n junction with obviously rectifying behavior is achieved with optimal PF layer thickness. The photoluminescence (PL) spectrum covering the broad visible range was obtained from the n-ZnO nanorods/p-polyfluorene (PF) structure, which was originated from the combination of the PF-related blue emission and the ZnO-related deep level emission.
The optical transmission(200--2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Ω/), ITO(12 Ω/), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were investigated. Near-infrared organic light-emitting diodes(NIR-OLEDs) emitting around 1.54 μm based on Er(DBM)3Phen with ITO(100 Ω/), ITO(12 Ω/) and PANI as anodes, respectively, were fabricated. The device structure was anode/4"-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine(m-MTDATA)/ N,N'-di-l-naphthyl- N,N'-diphenylbenzidine(NPB)/Er(DBM)3Phen/tris-(8-hydroxyquinoline) aluminum(Alq3)/A1. The results suggest that the performance of NIR-OLEDs with ITO(100 Ω/), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO(12 Ω/) and PANI as anodes, respectively. The high N1R transmittance of ITO(100 Ω/) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO(100 Ω/) are another reasons.