H_5 photonic crystal（PC） microcavities co-implanted with erbium（Er） and oxygen（O） ions were fabricated on silicon-on-insulator（SOI） wafers.Photoluminescence（PL） measurements were taken at room temperature and a light extraction enhancement of up to 12 was obtained at 1.54μm,as compared to an identically implanted unpatterned SOI wafer.In addition,we also explored the adjustment of cavity modes by changing the structural parameters of the PC,and the measured results showed that the cavity-resonant peaks shifted towards shorter wavelengths as the radius of the air holes increased,which is consistent with the theoretical simulation.
We demonstrate a novel SOI-based photonic crystal（PC） double-heterostructure slot waveguide microcavity constructed by cascading three PC slot waveguides with different slot widths,and simulate the luminescence enhancement of sol-gel Er-doped SiO2 filled in the microcavity by finite-difference time-domain（FDTD） method.The calculated results indicate that a unique sharp resonant peak dominates in the spectrum at the expected telecommunication wavelength of 1.5509 mm,with very high normalized peak intensity of ~108.The electromagnetic field of the resonant mode exhibits the strongest in the microcavity,and decays rapidly to zero along both sides,which means that the resonant mode field is well confined in the microcavity.The simulation results fully verify the enhancement of luminescence by PC double-heterostructure slot waveguide microcavity theoretically,which is a promising way to realize the high-efficiency luminescence of Si-based materials.
A high-speed broadband tunable microwave source utilizing the wavelength tunable characteristics of distributed Bragg reflector(DBR) laser is proposed and demonstrated.The wavelength tuning of the laser is achieved instantaneously by controlling the voltage of the phase section of the DBR laser.By means of optical delay self-heterodyne technology,the microwave signal with the property of frequency broadband tuning is generated.Sweep speeds of 5 and 40 μs of the sweep-frequency source prototype were achieved and the maximum tuning range was up to 38.45 GHz.
A 10-channel, 200 GHz channel spacing InP arrayed waveguide grating was designed, and the deep ridge waveguide design makes it polarization independent. Under the technologies of molecular beam epitaxy, lithography, and induced coupler plasma etching, the chip was fabricated in our laboratory. The test results show that the insertion loss is about -8 dB, and the crosstalk is less than -17 dB.
We design and fabricate compact, low loss, and high port-count optical power splitters of 1 × 128 and 2 × 128 using silica-based planar lightwave circuit （PLC） technology on 6 inch quartz substrate. PLC technology is mainly based on plasma enhanced chemical vapor deposition, photolithography, and etching. The measured results show that the insertion loss, uniformity, and wavelength-dependent loss of 1 ~ 128 and 2 x 128 optical power splitters are less than 23, 1.43, and 0.92 dB and 23.3, 1.8, and 1.3 dB, respectively, in the wavelength range from 1.26 to 1.65/ma. The polarization-dependent losses are less than 0.16 and 0.2 dB, respectively, in the wavelengths of 1.31, 1.49, and 1.55 l/in.
