Gallium oxide （Ga203） films were deposited on singlecrystalline sapphire （0001） substrate by radio frequency （RF） magnetron sputtering technique in the temperature range of 300--500 ℃. The microstructure of the fl-Ga203 films were investigated in detail using X-ray diffractometer （XRD） and scanning electron microscope （SEM）. The results show that the film prepared at 500℃ exhibits the best crystallinity with a monoclinic structure （fl-Ga203）. Structure analysis reveals a clear out-of-plane orientation offl-Ga203 （201） II A1203 （0001）. The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared （UV-vis-NIR） spectrophotometer. Therefore, it is hopeful that the fl-Ga203 film can be used in the UV optoelectronic devices.
SUN Jian-xuMI WeiZHANG De-shuangYANG Zheng-chunZHANG Kai-liangHAN Ye-meiYUAN Yu-jieZHAO Jin-shiLI Bo
Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 103 times of substrate bend-ing, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V, respectively.
We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio- frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the conducting mechanism is discussed in detail. growth pattern of the conducting filaments. Additionally, the related
In this paper,the positive influence of apodization weighting method on frequency characteristics of surface acoustic wave(SAW)temperature sensor is investigated.Simulation and experiment results show that side lobe suppression abilities of the sensor can be improved by using apodization weighting which is based on Chebyshev window.Meanwhile,we find that the side lobe of the sensor can be further restrained,when the dummy electrodes are removed.Frequency-temperature characteristics of the devices are independent of the inclusion of dummy electrodes.The apodization weighted SAW temperature sensor shows great application potential in occasions with strong electromagnetic interference.
