The molecular dynamics （MD） simulation and the modified analytical embedded-atom method （MAEAM） were used to study the influence of a He atom on the movement of the（a/2）？110？{111} edge dislocation in Ni. First, the calculated Burgers vector distribution shows that the equilibrium dissociation distance （Ded） and the stacking fault energy （Esf） between two partial edge dislocations are about 25.95 ？ and 108 mJ/m2, respectively. Then, the obtained formation energies （Ef） of a He atom at some different sites demonstrate that the He atom is attracted and repelled in the tension and compression regions, respectively. And the He？dislocation interaction reveals that an interstitial He atom plays a more significant role in the dislocation movement than a substitutional He atom. Finally, it is found that the movement of an interstitial He atom is apparent as the first partial dislocation bypasses and the edge dislocation offers fast-diffusion path for the migration of a He atom.
