With modified necessary steps for SiGe implementation,multi-finger power SiGe H BT devices are fabricated in a CMOS process line with 125mm wafer.The devices s how quite high BV CBO 23V.The current gain is very stable over a wide I C.The f T is up to 7GHz at a DC bias of I C=40mA and V CE=8 V,which show high current handling capability.Under continuous conditions in B o peration,the 31dBm output power,10dB G p,and 33.3% of PAE are obtained at 3GHz .Based on extensive tests,it has been demonstrated that the yield on a wafer is up to 85%,which means that the research results are capable of commercialization .
A new 125mm UHV/CVD SiGe/Si epitaxy equipment SGE500 capable of commercialization is constructed and device-level SiGe HBT material is grown.A polysilicon emitter (PolyE) double mesa microwave power SiGe HBT showing excellent low current DC characteristics with β=60@V CE/I C=9.0V/300μA,β=100@5V/50mA,BV CBO=22V,f t/f max=5.4GHz/7.7GHz@3V/10mA is demonstrated.The PolyE SiGe HBT needs only 6 lithographical steps and cancels the growth of the thick emitter epitaxy layer,both of which show great potential for volume production.A 60-finger class-A SiGe linear power amplifer (PA) w ith 22dBm of 1dB compress point output power (P 1dB),11dB of power gain (G p) and 26.1% of power added efficiency (PAE) @900MHz,3.5V/0.2A is demonstrated.Another 120-finger class-A SiGe PA with 33.3dBm (2.1W) of P out,10.3dB of G p and 33.9% of PAE @900MHz,11V/0.52A is also demonstrated.
