A new process method is proposed to improve the light output power of GaAs vertical cavity surface-emitting lasers （VCSELs）. The VCSELs with open-annulus-distributed holes have a light output power 1.34 times higher than those with ring trenches. The 14μm-aperture devices have a light output power higher than 10mW and have a maximum of 12.48mW at 29.6mA. In addition,open-annulus-distributed holes offer bridges for current injection,so the connecting Ti-Au metal between the ohmic contact and bonding pad does not have to cross the ring trench, and it therefore would not cause the connecting metal to be broken. These VCSELs also show high-temperature operation capabilities,and they have a maximum output power of 8mW even at an operation temperature of up to 60℃.
