搜索到22346篇“ SCHOTTKY“的相关文章
双轴应变对NbSe_(2)/MoSi_(2)N_(4)肖特基势垒的调控
2025年
最近一种高质量的二维(Two-dimensional,2D)半导体材料MoSi_(2)N_(4)(MSN)在实验上被成功合成,具有优异的电气和机械性能.尽管最近有大量的研究致力于揭示MSN的材料特性,但到目前为止,对MSN的电接触物理特性的探索还比较少.在这项工作中,构建了金属-半导体NbSe_(2)/MSN肖特基结并使用第一性原理密度泛函理论计算研究了该肖特基结的材料特性.发现NbSe_(2)/MSN接触具有超低肖特基势垒高度(Schottky barrier height,SBH),这有利于纳米电子学应用.SBH可以通过施加双轴应变的方式进行有效的调控.当施加拉伸应变时能实现NbSe_(2)/MSN肖特基结由p型肖特基接触转变为p型欧姆接触,而当施加较大的压缩应变时能实现p型肖特基接触和n型肖特基接触之间的转换.我们的研究结果为MSN的2D电触点的物理特性提供了见解,并将为设计基于MSN的2D纳米器件的高性能电触点提供关键的一步.
张宇哲安梦雅谢泉
关键词:肖特基结欧姆接触
基于GaN肖特基二极管的大功率微波限幅技术研究
2025年
随着高功率微波技术的发展,超宽带、高功率等强电磁技术对电子化设备威胁越来越大,使用高功率微波摧毁电子信息装备成为了干扰通信系统的重要方式。对高功率微波的防护主要分为前门防护和后门防护,限幅器作为前门防护的重要微波器件也面临越来越高的要求。本文首先介绍了GaN材料及肖特基二极管的器件特点和性能优势,然后论文介绍了以半导体器件为基础的限幅器原理及电路结构,并对以GaN肖特基二极管为基础的新一代大功率微波限幅技术研究进展进行论述。
霍树栋张正兴郑梦晗党魁张进成郝跃
关键词:高功率微波技术
一维/二维半导体器件肖特基势垒高度的调整方法被引量:2
2024年
The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A Schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal–semiconductor interface.Controlling or adjusting Schottky barrier height(SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nanosemiconductor devices. These methods encompass the work function of the metals, interface gap states,surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field.
孟建平李正国李舟
外电场对ZnSe/石墨烯异质结肖特基调控的第一性原理研究
2024年
本文采用基于密度泛函理论的第一性原理平面波超软赝势方法研究了ZnSe/石墨烯异质结结构的稳定性、界面相互作用、层间电荷转移情况、肖特基接触类型及外电场的影响。结果表明,ZnSe/石墨烯异质结晶的格失配率小于5%,易于形成,其接触类型为n型肖特基接触。当施加正方向电场时,肖特基接触类型从n型转变成p型肖特基接触;当施加负方向电场时,肖特基势垒明显降低,并由n型肖特基势垒接触转变为欧姆接触。本文研究结果将为设计并制造场效应晶体管、光电探测器等电子光学器件提供理论参考。
卫来庞国旺张文张丽丽黄以能
关键词:肖特基势垒外电场
Preparation and characteristic study of Schottky diodes based on Ga_(2)O_(3)thin films
2024年
This study uses atomic layer deposition(ALD)to grow Ga_(2)O_(3)films on SiO_(2)substrates and investigates the influence of film thickness and annealing temperature on film quality.Schottky diode devices are fabricated based on the grown Ga_(2)O_(3)films,and the effects of annealing temperature,electrode size,and electrode spacing on the electrical characteristics of the devices are studied.The results show that as the film thickness increases,the breakdown voltage of the fabricated devices also increases.A Schottky diode with a thickness of 240 nm can achieve a reverse breakdown voltage of 300 V.The film quality significantly improves as the annealing temperature of the film increases.At a voltage of 5 V,the current of the film annealed at 900℃is 64 times that of the film annealed at 700℃.The optimum annealing temperature for Ohmic contact electrodes is 450℃.At 550℃,the Ohmic contact metal tends to burn,and the performance of the device is reduced.Reducing the electrode spacing increases the forward current of the device but decreases the reverse breakdown voltage.Increasing the Schottky contact electrode size increases the forward current,but the change is not significant,and there is no significant change in the reverse breakdown voltage.The device also performs well at high temperatures,with a reverse breakdown voltage of 220 V at 125℃.
Zhang XuhuiChen HaifengLiu XiangtaiLu QinWang ZhanCheng HangChe LujieGuan YouyouHan Xiaocong
纳米碳片负载Mott-Schottky型Co/Co_(9)S_(8)异质结的原位合成及电催化性能研究被引量:1
2024年
以K_(3)[Co(CN)_(6)]为Co源,硫脲为S源,富含-OH和-NH_(2)的天然亲水性高分子壳聚糖为碳源,通过形成CS-K_(3)[Co(CN)_(6)]水凝胶将Co前驱体和S源均匀分布于C前驱体中。水凝胶形成的主要驱动力来自金属Co离子与壳聚糖中-NH_2的配位交联以及Co离子之间通过-CN的桥接作用。得益于均匀分散的前驱体和后续热解处理初期形成的Co的催化作用,通过简单地调控Co与S的原子比,原位构建出均匀镶嵌有Co/Co_(9)S_(8)异质结的N,S共掺杂富含微孔的碳纳米片(Co/Co_(9)S_(8)@N,S-CNSs)。采用SEM、TEM、BET、XRD、Raman、XPS和电化学工作站等方法对所制备催化剂的形貌、组成和结构以及电催化性能进行了表征。结果表明,形成的Mott-Schottky型Co/Co_(9)S_(8)异质界面有效地调控了活性中心的电子结构和电荷传输特性;二维掺杂多孔碳纳米片的负载使活性位点更加均匀分散,同时提供了高速的电子和传质通道,也避免了活性位点在催化过程中的迁移聚集。两者的协同作用使合成的Co/Co_(9)S_(8)@N,S-CNSs复合催化剂具有了更优的催化性能,在10 mA·cm^(-2)的电流密度下,其催化碱性析氧反应/OER的过电位仅为304 mV,优于商业化的RuO_(2)催化剂。该研究为发展具有优异电催化性能的廉价过渡金属催化剂提供帮助。
方瑜李靖孔维超周雪徐林孙冬梅孙冬梅
Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit
2024年
Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap.This breakthrough has played a significant role in accelerating the development of infrared imaging in one chip with state-of-the-art silicon techniques.However,the performance of these Schottky infrared detectors is currently hindered by the limit of internal photoemission;specifically,a low Schottky barrier height is inevitable for the detection of low-energy infrared photons.Herein,a distinct paradigm of Schottky infrared detectors is proposed to overcome the internal photoemission limit by introducing an optically tunable barrier.This device uses an infrared absorbing material-sensitized Schottky diode,assisted by the highly adjustable Fermi level of graphene,which subtly decouples the photon energy from the Schottky barrier height.Correspondingly,a broadband photoresponse spanning from ultraviolet to mid-wave infrared is achieved,with a high specific detectivity of 9.83×1010 cm Hz1/2 W−1 at 2,700 nm and an excellent specific detectivity of 7.2×109 cm Hz1/2 W−1 at room temperature under blackbody radiation.These results address a key challenge in internal photoemission and hold great promise for the development of the Schottky infrared detector with high sensitivity and room temperature operation.
Jintao FuZhongmin GuoChangbin NieFeiying SunGenglin LiShuanglong FengXingzhan Wei
关键词:SCHOTTKYTUNABLEBEYOND
A novel one-time-programmable memory unit based on Schottky-type p-GaN diode
2024年
In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.
Chao FengXinyue DaiQimeng JiangSen HuangJie FanXinhua WangXinyu Liu
2D/2D Ti_(3)C_(2) MXene/HTiNbO_(5) nanosheets Schottky heterojunction for boosting photothermal-assisted solar-driven photodegradation of tetracycline hydrochloride
2024年
Developing high-efficiency photocatalysts for tetracycline hydrochloride(TCH)degradation is of great sig-nificance to ecosystems and human beings.In this work,a two-step process of exfoliation and re-stacking was performed to prepare re-stacked HTiNbO_(5) nanosheets(R-HTNS)and then coupled with Ti_(3)C_(2) MXene to construct Ti_(3)C_(2) MXene/R-HTNS(MX/RTS)with a 2D/2D Schottky heterojunction.These 2D/2D het-erostructures between Ti_(3)C_(2) MXene and R-HTNS can produce an internal electric field and provide max-imum interface area for efficient charge transfer across the intimate interface.The photocatalytic perfor-mance of samples was evaluated by TCH degradation under simulated sunlight.The MX/RTS composites,with an optimal sample of 3-MX/RTS,show enhanced photocatalytic activity for TCH degradation com-pared with R-HTNS.The characterization results reveal that the introduction of Ti_(3)C_(2) MXene can signif-icantly increase specific surface area for providing more reactive sites and broaden the light absorption region.Besides,the incident light energy is absorbed by the Ti_(3)C_(2) MXene component in MX/RTS compos-ites to generate photothermal energy(heat),which facilitates the charge carrier separation and surface reaction kinetics.Thus,the enhanced TCH photodegradation activity for MX/RTS composites is due to the introduction of Ti_(3)C_(2) MXene,which possesses the synergistic effect of the increased specific surface area,improved light-harvesting capacity,2D/2D Schottky heterojunction,and photothermal energy effect.Additionally,the TCH photodegradation behavior is deliberated with a detailed discussion on various co-existing ions.During TCH photodegradation,the active radical species are determined for 3-MX/RTS.Ac-cording to the characterization results,the possible TCH photodegradation pathway and mechanism over 3-MX/RTS are explored.This work may offer a novel insight for constructing MXene-based heterostruc-tured photocatalysts with high efficiency.
Wen XiaoHuan YuChenghao XuZhongyi PuXiangyu ChengFang YuChao LiuQinfang ZhangZhigang Zou
关键词:PHOTODEGRADATION
基于SiC肖特基二极管温度特性的研究
2024年
碳化硅(SiC)作为第三代宽带隙半导体材料,其因优异的物理特性而被广泛研究。针对SiC器件在高温环境下可能会因为不理想的散热导致器件失效从而引发可靠性问题,文中采用仿真的方法对铂Pt/SiC肖特基二极管器件进行了测试,并研究了该型器件在高温下的伏安特性。结果表明,Pt/SiC肖特基二极管器件在正偏的情况下,随着温度的升高,器件的电流水平会逐渐降低;器件反偏时,反向电流水平则随着温度的升高而急剧增大。同时在高温下器件的反向电流基本趋于饱和,热电子发射电流占据主导地位,且200℃时电子的迁移率仅为500 cm2/(V·s)。
李金钊
关键词:碳化硅肖特基势垒二极管温度特性开启电压电子迁移率

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张胜寒
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陶辉锦
作品数:54被引量:234H指数:7
供职机构:中南大学材料科学与工程学院
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杨莉
作品数:14被引量:71H指数:5
供职机构:上海交通大学
研究主题:铝镓氮 探测器 SCHOTTKY 计算机视觉 多目标分割