搜索到755篇“ STRAINED-SI“的相关文章
Strain induced changes in performance of strained-Si/strained-Si1-yGey/relaxed-Si1-xGex MOSFETs and circuits for digital applications
2017年
Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high performance complementary metal-oxide-semiconductor(CMOS) circuits. Down scaling metal-oxide-semiconductor field-effect transistors(MOSFETs) into the deep submicron/nanometer regime forces the source(S) and drain(D) series resistance to become comparable with the channel resistance and thus it cannot be neglected. Owing to the persisting technological importance of strained Si devices, in this work, we propose a multi-iterative technique for evaluating the performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and its related circuits in the presence of S/D series resistance, leading to the development of a simulator that can faithfully plot the performance of the device and related digital circuits. The impact of strain on device/circuit performance is also investigated with emphasis on metal gate and high-k dielectric materials.
Kumar SubinduKumari AmritaDas Mukul K
关键词:METAL-OXIDE-SEMICONDUCTORHIGH-KMETAL-OXIDE-SEMICONDUCTORFIELD-EFFECT
High-Mobility P-Type MOSFETs with Integrated Strained-Si_(0.73)Ge_(0.27) Channels and High-κ/Metal Gates
2016年
Strained-Si0.73Ge0.27 channels are successfully integrated with high-R/metal gates in p-type metai-oxide- semi- conductor field effect transistors (pMOSFETs) using the replacement post-gate process. A silicon cap and oxide inter layers are inserted between Si0.73Ge0.27 and high-κ dielectric to improve the interface. The fab- ricated Si0.73Ge0.27 pMOSFETs with gate length of 3Onto exhibit good performance with high drive current (~428μA/μm at VDD = 1 V) and suppressed short-channel effects (DIBL^77mV/V and SS^90mV/decade). It is found that the enhancement of effective hole mobility is up to 200% in long-gate-length Si0.73Ge0.27-channel pMOSFETs compared with the corresponding silicon transistors. The improvement of device performance is reduced due to strain relaxation as the gate length decreases, while 26% increase of the drive current is still obtained for 30-nm-gate-length Si0.73Ge0.27 devices.
毛淑娟朱正勇王桂磊朱慧珑李俊峰赵超
对称双栅高斯掺杂应变Si金属氧化物半导体场效应管的二维解析模型被引量:1
2016年
基于扩散、阈值调整和离子注入等工艺过程导致器件的沟道区的掺杂分布不均匀,提出对称双栅高斯掺杂应变硅MOSFET器件,并对其相关特性进行研究。通过对沟道二维泊松方程求解建立该器件结构的表面势和阈值电压模型,分析弛豫SiGe层的Ge组分和掺杂偏差σn对表面势和阈值电压的影响。此外,还对比分析高斯掺杂对称双栅应变硅MOSFET器件和均匀掺杂对称双栅应变硅MOSFET器件的表面势和阈值电压。研究结果表明:阈值电压随应变Si膜中Ge组分的增加而降低;表面势和阈值电压随偏差σn的增加而减小;高斯掺杂对称双栅应变硅MOSFET器件和均匀掺杂对称双栅应变硅MOSFET器件的表面势和阈值电压相差较大,表明非均匀掺杂对器件表面势和阈值电压等影响较大。
李劲吴笑峰席在芳胡仕刚李目
关键词:应变SI
The effects of drain scatterings on the electron transport properties of strained-Si diodes with ballistic and non-ballistic channels
2015年
The effects of multiple scattering on the electron transport properties in drain regions are numerically investigated for the cases of strained-Si diodes with or without scattering in the channel. The performance of non- ballistic (with scattering) channel Si-diodes is compared with that of ballistic (without scattering) channel Si-diodes, using the strain and scattering model. Our results show that the values of the electron velocity and the current in the strain model are higher than the respective values in the unstrained model, and the values of the velocity and the current in the ballistic channel model are higher than the respective values in the non-ballistic channel model. In the strain and scattering models, the effect of each carrier scattering mechanism on the performance of the Si- diodes is analyzed in the drain region. For the ballistic channel model, our results show that inter-valley optical phonon scattering improves device performance, whereas intra-valley acoustic phonon scattering degrades device performance. For the strain model, our results imply that the larger energy splitting of the strained Si could suppress the inter-valley phonon scattering rate. In conclusion, for the drain region, investigation of the strained-Si and scattering mechanisms are necessary, in order to improve the performance of nanoscale ballistic regime devices.
亚森江.吾甫尔买买提明.艾尼买买提热夏提.买买提阿不都克里木.阿不都热合曼
Intrinsic Carrier Concentration as a Function of Stress in(001),(101) and(111) BiaxiallyStrained-Si and Strained-Si_(1-x)Ge_x
2015年
Intrinsic carrier concentration(ni) is one of the most important physical parameters for understanding the physics of strained Si and Si1-xGex materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and Si1-xGex materials has been still lacking. In this paper, by analyzing the band structure of strained Si and Si1-xGex materials, both the effective densities of the state near the top of valence band and the bottom of conduction band( Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction(x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si(001) and Si1-xGex(001) and(101) materials at 300 K increases significantly with increasing Ge fraction(x), which provides valuable references to understand the Sibased strained device physics and design.
靳钊QIAO LipingLIU LidongHE ZhiliGUO ChenLIU Ce
沟道和漏极散射机制对短沟道应变硅二极管性能的影响
2015年
新材料应变硅已成为目前高性能小尺寸半导体器件的研究热点,研究应变硅器件散射机制有利于理解载流子输运特性的物理机制。因此沟道和漏极区域分别建立了应变模型和散射模型,采用数值模拟方法对比研究了短沟道应变硅二极管中电子的输运特性。模拟结果表明,对于漏极区域中的散射模型,非弹性散射均促使器件的性能增强,而弹性散射则导致器件性能衰弱,这是由于应变诱导的能级分裂束缚了光学声子散射;相对于沟道区域,漏极区域的应变模型和散射机制对于短沟道硅二极管性能的影响较大。因此,对于短沟道半导体器件,除了探讨沟道区域应变和散射机制之外还需要分析漏极区域应变和散射机制的影响。
亚森江.吾甫尔买买提明.艾尼买买提热夏提.买买提阿布都克力木.阿布都热合曼
关键词:散射硅二极管
Analytical modeling of subthreshold current and subthreshold swing of Gaussiandoped strained-Si-on-insulator MOSFETs被引量:1
2014年
This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted (FD) strained-Si-on-insulator (SSOI) MOSFETs having vertical Gaussian-like doping pro- file in the channel. The subthreshold current and subthreshold swing have been derived using the parabolic approx- imation method. In addition to the effect of strain on silicon layer, various other device parameters such as channel length (L), gate-oxide thickness (tox), strained-Si channel thickness (ts_Si), peak doping concentration (Np), project range (Rp) and straggle (op) of the Gaussian profile have been considered while predicting the device characteris- tics. The present work may help to overcome the degradation in subthreshold characteristics with strain engineering. These subthreshold current and swing models provide valuable information for strained-Si MOSFET design. Ac- curacy of the proposed models is verified using the commercially available ATLASTM, a two-dimensional (2D) device simulator from SILVACO.
Gopal RawatSanjay KumarEkta GoelMirgender KumarSarvesh DubeyS.Jit
The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET被引量:1
2013年
The effect of substrate doping on the flatband and threshold voltages of a strained-Si/SiGe p metal-oxide semiconductor field-effect transistor(pMOSFET) has been studied.By physically deriving the models of the flatband and threshold voltages,which have been validated by numerical simulation and experimental data,the shift in the plateau from the inversion region to the accumulation region as the substrate doping increases has been explained.The proposed model can provide a valuable reference to the designers of strained-Si devices and has been implemented in software for extracting the parameters of a strained-Si MOSFET.
王斌张鹤鸣胡辉勇张玉明周春宇王冠宇李妤晨
关键词:DOPING
超薄SGOI衬底上全局应变Si的制备和表征被引量:1
2013年
应变Si是一种能在未来保持Si CMOS技术的发展继续遵循摩尔定律的新材料.本文结合SOI技术,利用改进型Ge浓缩技术制备了绝缘体上超薄的弛豫SiGe衬底,并使用超高真空化学气相沉积在较低温度下成功外延了厚度为25nm的应变Si单晶薄膜,扫描电子显微镜和原子力显微镜显示样品表面薄膜完整、平坦;高分辨透射电子显微镜和二次离子质谱表明:样品各层结构清晰、位错密度极低、界面陡直且元素分布均匀;紫外拉曼光谱证实了顶层Si中获得了1%的平面张应变,基于此的MOS器件有望获得比传统体Si大大提升的性能.
刘旭焱王爱华蒋华龙濮春英姚文华崔本亮
关键词:应变SI应变弛豫
Longitudinal,transverse,density-of-states,and conductivity masses of electrons in(001),(101) and(111) biaxiallystrained-Si and strained-Si_(1-x)Ge_x被引量:5
2012年
In this study,the electron effective masses,including longitudinal,transverse,density-of-states and conductivity effective masses,have been systematically investigated in(001),(101) and(111) biaxially strained Si and Si1-xGex.It is found that the effect of strain on the longitudinal and transverse masses can be neglected,that the density-of-states masses in(001) and(110) biaxially strained Si and Si1-xGex materials decrease significantly with increasing Ge fraction(x),and that the conductivity masses along typical orientations in(001) and(110) strained Si and Si1-xGex.are obviously different from those in relaxed Si.The quantitative results obtained from this work may provide valuable theoretical references to understanding strained materials physics and studying conduction channel design related to stress and orientations in the strained devices.
SONG JianJunYANG ChaoZHANG HeMingHU HuiYongZHOU ChunYuWANG Bin

相关作者

李竞春
作品数:69被引量:73H指数:5
供职机构:电子科技大学
研究主题:SIGE MOS器件 CMOS 沟道 SIGE_HBT
张静
作品数:82被引量:50H指数:4
供职机构:中国电子科技集团
研究主题:SIGE_HBT SIGE 异质结双极晶体管 半导体 分子束外延
谭静
作品数:6被引量:5H指数:2
供职机构:电子科技大学
研究主题:SIGE MOS器件 栅介质 VIRTUAL SUBSTRATES
谭耀华
作品数:2被引量:3H指数:1
供职机构:清华大学
研究主题:PMOS 反型层 蒙特卡罗 迁移率 应变硅
田立林
作品数:48被引量:55H指数:3
供职机构:清华大学信息科学技术学院微电子学研究所
研究主题:MOSFET SOI 浮体效应 纳米 沟道