In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 （L） peak in annealed high Sb＋ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of Sbzn-2Vz,, complex acceptor. The appearance of a new peak at 510 cm-1 in the annealed high dose Sb＋ implanted samples is speculated to result from （Zn interstitials-O interstitials） Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb＋ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.
Ga-doped ZnO （GZO） films are prepared on amorphous glass substrates at room temperature by radio frequency magnetron sputtering. The results reveal that the gallium doping efficiency, which will have an important influence on the electrical and optical properties of the film, can be governed greatly by the deposition pressure and film thickness. The position shifts of the ZnO （002） peaks in X-ray diffraction （XRD） measurements and the varied Hall mobility and carrier concentration confirms this result. The low Hall mobility is attributed to the grain boundary barrier scattering. The estimated height of barrier decreases with the increase of carrier concentration, and the trapping state density is nearly constant. According to defect formation energies and relevant chemical reactions, the photoluminescence （PL） peaks at 2.46 eV and 3.07 eV are attributed to oxygen vacancies and zinc vacancies, respectively. The substitution of more Ga atoms for Zn vacancies with the increase in film thickness is also confirmed by the PL spectrum. The obvious blueshift of the optical bandgap with an increase of carrier concentration is explained well by the Burstein Moss （BM） effect. The bandgap difference between 3.18 eV and 3.37 eV, about 0.2 eV, is attributed to the metal-semiconductor transition.
The role of temperature on the oxidation dynamics of Cu20 on ZnO （0001） was investigated during the oxidation of Cu （111）/ZnO （0001） by using oxygen plasma as the oxidant. A transition from single crystalline Cu20 （111） orientation to micro-zone phase separation with multiple orientations was revealed when the oxidation temperature increased above 300 ~ C. The experimental results clearly show the effect of the oxidation temperature with the assistance of oxygen plasma on changing the morphology of Cu （111） film and enhancing the lateral nucleation and migration abilities of cuprous oxides. A vertical top-down oxidation mode and a lateral migration model were proposed to explain the different nucleation and growth dynamics of the temperature-dependent oxidation process in the oxidation of Cu （lll）/ZnO （0001）.
