A novel SPIC(smart power IC) with a simple APFC(active power factor correction) circuit on one chip is proposed.The V _ bus (bus voltage) with high power factor falls from 600V to 400V by using a delay circuit in which a long channel length NMOS is used to substitute a large biasing resistance to save chip area.The lower V _ bus results in a smaller R _ on (on-resistance) of power switcher,which reduces the power loss of the power devices,improves the efficiency of the circuit,and reduces the cost of circuits.An integrated high voltage over voltage protect circuit is also designed in the circuits.Theory and simulations both prove the correctness and availability of the design.
The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.
A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.The field limiting ring as a voltage divider,is used to optimize the surface field.The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits.An example of 400V rings system is analyzed and simulated for this structure.The results prove that the high voltage detector can detect high voltage in SPIC.The structure can be integrated into SPIC.Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required.
