IGBT with high switching speed is described based on the dynamic controlled anode- short,which incorpo- rates a normally- on,p- MOSFET controlled by the anode voltage indirectly.This device works just as normal when it is in on- state since the channel of the p- MOSFET is pinched- off.During the course of turning off,the channel of the p- MOSFET will prevent the injection of m inorities and introduce an extra access for the carriers to flow to the anode directly,which m akes the IGBT reach its off- state in a shorter time.The simulation results prove that the new structure can reduce the turn- off time by m ore than75 % compared with the normal one under the same break- down voltage and on- state perform ance.Only two more resistors are needed when using this structure,and the re- quirement of the drive circuits is just the sam e as normal.
A novel SPIC(smart power IC) with a simple APFC(active power factor correction) circuit on one chip is proposed.The V _ bus (bus voltage) with high power factor falls from 600V to 400V by using a delay circuit in which a long channel length NMOS is used to substitute a large biasing resistance to save chip area.The lower V _ bus results in a smaller R _ on (on-resistance) of power switcher,which reduces the power loss of the power devices,improves the efficiency of the circuit,and reduces the cost of circuits.An integrated high voltage over voltage protect circuit is also designed in the circuits.Theory and simulations both prove the correctness and availability of the design.
The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.
